sep.1998 dimensions inches millimeters a 3.7 94.0 b 3.15 0.01 80.0 0.25 c 1.89 48.0 d 0.94 24.0 e 0.28 7.0 f 0.67 17.0 g 0.91 23.0 h 0.91 23.0 j 0.43 11.0 l 0.16 4.0 dimensions inches millimeters m 0.47 12.0 n 0.53 13.5 o 0.1 2.5 p 0.63 16.0 q 0.98 25.0 r 1.18 +0.04/-0.02 30.0 +1.0/-0.5 s 0.3 7.5 t 0.83 21.2 u 0.16 4.0 v 0.51 13.0 description: mitsubishi igbt modules are de- signed for use in switching applica- tions. each module consists of one igbt having a reverse-connected super-fast recovery free-wheel di- ode and an anode-collector con- nected super-fast recovery free- wheel diode. all components and interconnects are i solated from the heat sinking baseplate, offering simplified system assembly and thermal management . features: u low drive power u low v ce(sat) u discrete super-fast recovery free-wheel diode u high frequency operation u isolated baseplate for easy heat sinking application: u brake ordering information: example: select the complete module number you desire from the table - i.e. CM75E3U-12H is a 600v (v ces ), 75 ampere igbt module. current rating v ces type amperes volts (x 50) cm 75 12 mitsubishi igbt modules CM75E3U-12H high power switching use insulated type outline drawing and circuit diagram g2 g2 e2 e2 g2 c1 c2e1 a g f cm v 2 - mounting holes (6.5 dia.) e u h e2 c1 c2e1 c 3-m5 nuts d b j l n m p p q o o t c measured point r s t tab#110 t=0.5
sep.1998 absolute maximum ratings, t j = 25 c unless otherwise specified ratings symbol CM75E3U-12H units junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25 c) i c 75 amperes peak collector current i cm 150* amperes emitter current** (t c = 25 c) i e 75 amperes peak emitter current** i em 150* amperes maximum collector dissipation (t c = 25 c, t j 150 c) p c 310 watts mounting torque, m5 main terminal C 2.5~3.5 n m mounting torque, m6 mounting C 3.5~4.5 n m weight C 310 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms * pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). static electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1 ma gate leakage voltage i ges v ge = v ges , v ce = 0v C C 0.5 m a gate-emitter threshold voltage v ge(th) i c = 7.5ma, v ce = 10v 4.5 6 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 75a, v ge = 15v, t j = 25 c C 2.4 3.0 volts i c = 75a, v ge = 15v, t j = 125 c C 2.6 C volts total gate charge q g v cc = 300v, i c = 75a, v ge = 15v C 150 C nc emitter-collector voltage** v ec i e = 75a, v ge = 0v C C 2.6 volts emitter-collector voltage v fm i f = 75a, clamp diode part C C 2.6 volts **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). dynamic electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units input capacitance c ies C C 6.6 nf output capacitance c oes v ce = 10v, v ge = 0v C C 3.6 nf reverse transfer capacitance c res CC1nf resistive turn-on delay time t d(on) v cc = 300v, i c = 75a, C C 100 ns load rise time t r v ge1 = v ge2 = 15v, C C 250 ns switch turn-off delay time t d(off) r g = 8.3 w , resistive C C 200 ns times fall time t f load switching operation C C 300 ns diode reverse recovery time** t rr i e = 75a, di e /dt = -150a/ m s C C 160 ns diode reverse recovery charge** q rr i e = 75a, di e /dt = -150a/ m s C 0.18 C m c diode reverse recovery time t rr i f = 75a, clamp diode part C C 160 ns diode reverse recovery charge q rr di f /dt = -150a/ m s C 0.18 C m c **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). mitsubishi igbt modules CM75E3U-12H high power switching use insulated type
sep.1998 thermal and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) q per igbt module C C 0.4 c/w thermal resistance, junction to case r th(j-c) d per fwdi module C C 0.9 c/w thermal resistance, junction to case r th(j-c) clamp diode part C C 0.9 c/w contact thermal resistance r th(c-f) per module, thermal grease applied C 0.035 C c/w collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0246810 75 25 0 v ge = 20v 15 13 12 11 8 t j = 25 o c 50 125 100 150 10 9 14 gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 0 4 8 12 16 20 100 125 75 50 25 0 150 v ce = 10v t j = 25? t j = 125? collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 5 0 40 80 120 4 3 2 1 0 160 v ge = 15v t j = 25? t j = 125? gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 0 4 8 12 16 20 8 6 4 2 0 t j = 25? i c = 30a i c = 150a i c = 75a 1.0 1.4 1.8 2.2 2.6 3.0 10 0 10 1 10 2 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 3 emitter current, i e , (amperes) t j = 25? collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 2 10 1 10 0 10 -1 10 -2 v ge = 0v 10 1 c ies c oes c res mitsubishi igbt modules CM75E3U-12H high power switching use insulated type
sep.1998 time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (igbt) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.4 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3 time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (fwdi) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.9 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3 collector current, i c , (amperes) 10 3 10 0 10 1 10 2 10 2 10 1 10 0 t d(off) t d(on) t r v cc = 300v v ge = 15v r g = 8.3 w t j = 125 c t f switching time, (ns) half-bridge switching characteristics (typical) emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 0 10 1 10 2 10 2 10 1 t rr i rr di/dt = -150a/ m sec t j = 25 c 10 2 10 1 10 0 reverse recovery current, i rr , (amperes) gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 50 100 15 10 5 0 150 200 v cc = 300v v cc = 200v i c = 75a mitsubishi igbt modules CM75E3U-12H high power switching use insulated type
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